Optek (TT Electronics) HCT802
DUAL ENHANCEMENT MODE MOSFETWe are pleased to offer our customers Optek (TT Electronics) products with delivery to their respective countries. Please contact us for detailed information about pricing and delivery times. In your request, kindly send information containing product codes and specific details to our [email protected] address.
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Optek (TT Electronics) HCT802 Specifications
| Property | Value |
|---|---|
| Channel Type | N ; P |
| Configuration | Dual |
| Dimensions | 6.35 x 4.45 x 2.03 mm |
| Drain Current | -1.1 to 2 A |
| Drain to Source On Resistance | 5 Ohms |
| Drain to Source Voltage | 90 V |
| Forward Transconductance | 170 (N), 200 (P) mS |
| Gate to Source Voltage | ±20 V |
| Height | 0.08" (2.03mm) |
| Input Capacitance | Maximum of 150 pF @ -25 V (P), Maximum of 70 pF @ 25 |
| Length | 0.250 in |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 2 |
| Number of Pins | 6 |
| Operating Temperature | -55 to 150 °C |
| Package Type | SMD-6 |
| Polarization | N-Channel and P-Channel |
| Power Dissipation | 1.5 W |
| Series | HCT Series |
| Temperature Operating Range | -55 to +150 °C |
| Turn Off Delay Time | Maximum of 17 (N), Maximum of 50 (P) ns |
| Turn On Delay Time | Maximum of 15 (N), Maximum of 50 (P) ns |
| Type | Dual Enhanced Mode |
| Voltage, Breakdown, Drain to Source | 90 V |
| Width | 0 in |