Siliconix / Vishay 2N7002K-T1-E3
MOSFET, Power,N-Ch,VDSS 60V,RDS(ON) 2 Ohms,ID 300mA,TO-236 (SOT-23),PD 0.35WWe are pleased to offer our customers Siliconix / Vishay products with delivery to their respective countries. Please contact us for detailed information about pricing and delivery times. In your request, kindly send information containing product codes and specific details to our [email protected] address.
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Siliconix / Vishay 2N7002K-T1-E3 Specifications
| Property | Value |
|---|---|
| Channel Type | N |
| Configuration | Single |
| Dimensions | 3.04 x 1.4 x 1.02 mm |
| Drain Current | 300 mA |
| Drain to Source On Resistance | 4 Ohms |
| Drain to Source Voltage | 60 V |
| Forward Transconductance | 100 mS |
| Forward Voltage, Diode | 1.3 V |
| Gate to Source Voltage | ±20 V |
| Height | 0.04" (1.02mm) |
| Input Capacitance | 30 pF @ 25 V |
| Length | 0.119 in |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Number of Pins | 3 |
| Operating and Storage Temperature | -55 to +150 C |
| Package Type | TO-236 |
| Polarization | N-Channel |
| Power Dissipation | 0.35 W |
| Product Header | TrenchFET® Power MOSFET |
| Series | 2N7002 Series |
| Temperature Operating Range | -55 to +150 °C |
| Total Gate Charge | 0.4 nC |
| Turn Off Delay Time | 35 ns |
| Turn On Delay Time | 25 ns |
| Typical Gate Charge @ Vgs | 0.4 nC @ 10 V |
| Voltage, Breakdown, Drain to Source | 60 V |
| Width | 0.055 in |