General Semiconductor / Vishay 1N5819-E3/54
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General Semiconductor / Vishay 1N5819-E3/54 Specifications
| Property | Value |
|---|---|
| Configuration | Single |
| Continuous Forward Current | 1 A |
| Diameter | 2.7 mm |
| Dimensions | 2.7 Dia. x 5.2 L mm |
| Diode Type | Schottky |
| Forward Voltage | 0.6 V |
| Junction Capacitance | 110 pF |
| Junction to Ambient Thermal Resistance | 50 °C/W |
| Length | 0.204 in |
| Maximum Operating Temperature | +125 °C |
| Minimum Operating Temperature | -65 °C |
| Mounting Type | Through Hole |
| Non Repetitive On State Peak Current | 25 A |
| Number of Pins | 2 |
| Package Type | DO-204AL |
| Peak Current | 10000 μA |
| Primary Type | Schottky Barrier |
| Rectifier Type | Switching |
| Repetitive Peak Voltage | 40 V |
| Series | 1N5819 Series |
| Switching Speed | Fast |
| Temperature Operating Range | -65 to +125 °C |