General Semiconductor / Vishay V30120C-E3/4W
Diode,Schottky Barrier,Vr 120V,If 30A,Pkg TO-220AB,Config Dual,Vf 0.68V,Cs 150AWe are pleased to offer our customers General Semiconductor / Vishay products with delivery to their respective countries. Please contact us for detailed information about pricing and delivery times. In your request, kindly send information containing product codes and specific details to our [email protected] address.
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General Semiconductor / Vishay V30120C-E3/4W Specifications
| Property | Value |
|---|---|
| Configuration | Dual Common Cathode |
| Continuous Forward Current | 15 A |
| Dimensions | 10.54 x 15.32 x 4.70 mm |
| Diode Type | Schottky |
| Forward Voltage | 0.97 V |
| Height | 0.603" (15.32mm) |
| Length | 0.414 in |
| Maximum Junction Temperature | +150 °C |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -40 °C |
| Mounting Type | Through Hole |
| Non Repetitive On State Peak Current | 150 A |
| Number of Pins | 3 |
| Operating Temperature | -40 to +150 °C |
| Package Type | TO-220AB |
| Peak Current | 50000 μA |
| Primary Type | Schottky Barrier |
| Product Header | Dual High Voltage Trench MOS Barrier Schottky Rectifier |
| Rectifier Type | MOS |
| Repetitive Peak Voltage | 120 V |
| Resistance, Thermal, Junction to Case | 2.2 °C/W |
| Reverse Current | 17 mA |
| Series | V30120C Series |
| Surge Current | 150 A |
| Temperature Operating Range | -40 to +150 °C |
| Width | 0 in |