Infineon IRF6626TR1PBF

30V SINGLE N-CHANNEL HEXFET POWER MOSFET, DIRECTFET ST PKG

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Infineon IRF6626TR1PBF Specifications

Property	Value
Channel Type	N
Configuration	Dual Drain
Dimensions	4.85 x 3.95 x 0.506 mm
Drain Current	72 A
Drain to Source On Resistance	7.1 mΩ
Forward Voltage, Diode	1 V
Gate to Source Voltage	±20 V
Height	0.02" (0.506mm)
Input Capacitance	2380 pF @ 15 V
Length	0.19" (4.85mm)
Maximum Operating Temperature	+150 °C
Minimum Operating Temperature	-40 °C
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	DirectFET ST
Power Dissipation	42 W
Series	HEXFET Series
Temperature Operating Range	-40 to +150 °C
Turn Off Delay Time	17 ns
Width	0.156" (3.95mm)