Infineon IRF7309PBF
IRF7309PBF Dual N/P-channel MOSFET Transistor, 3 A, 4 A, 30 V, 8-Pin SOICWe are pleased to offer our customers Infineon products with delivery to their respective countries. Please contact us for detailed information about pricing and delivery times. In your request, kindly send information containing product codes and specific details to our [email protected] address.
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Infineon IRF7309PBF Specifications
| Property | Value |
|---|---|
| Channel Type | N ; P |
| Configuration | Dual Drain |
| Dimensions | 5.00 x 4.00 x 1.50 mm |
| Drain Current | -3 to 4 A |
| Drain to Source On Resistance | 0.080 to 0.16 Ohms |
| Drain to Source Voltage | -30 to 30 V |
| Forward Transconductance | 2.5 (P), 5.2 (N) S |
| Forward Voltage, Diode | 1/-1 V |
| Gate to Source Voltage | ±20 V |
| Height | 0.059" (1.5mm) |
| Input Capacitance | 440 pF @ -15 V (P), 520 pF @ 15 V (N) |
| Junction to Ambient Thermal Resistance | 90 °C/W |
| Length | 0.196 in |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 2 |
| Number of Pins | 8 |
| Operating Temperature | -55 to 150 °C |
| Package Type | SO-8 |
| Polarization | N-Channel and P-Channel |
| Power Dissipation | 1.4 W |
| Series | HEXFET Series |
| Temperature Operating Range | -55 to +150 °C |
| Total Gate Charge | 25/25 nC |
| Turn Off Delay Time | 22 (N), 25 (P) ns |
| Turn On Delay Time | 11 (P), 6.8 (N) ns |
| Typical Gate Charge @ Vgs | Maximum of 25 nC @ -4.5 V (P), Maximum of 25 nC @ 4. |
| Voltage, Breakdown, Drain to Source | 30/-30 V |
| Width | 0 in |