Infineon IRF7450TRPBF
MOSFET, 200V, 2.5A, 170 MOHM, 26 NC QG, SO-8We are pleased to offer our customers Infineon products with delivery to their respective countries. Please contact us for detailed information about pricing and delivery times. In your request, kindly send information containing product codes and specific details to our [email protected] address.
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Infineon IRF7450TRPBF Specifications
Property | Value |
---|---|
Channel Type | P |
Configuration | Quad Drain, Triple Source |
Dimensions | 5.00 x 4.00 x 1.50 mm |
Drain Current | 2.5 A |
Drain to Source On Resistance | 0.17 Ω |
Drain to Source Voltage | 200 V |
Forward Transconductance | 2.6 sec |
Forward Voltage, Diode | 1.3 V |
Gate to Source Voltage | ±30 V |
Height | 0.059" (1.5mm) |
Input Capacitance | 940 pF @ 25 V |
Length | 0.196" (5mm) |
Maximum Operating Temperature | +150 °C |
Minimum Operating Temperature | -55 °C |
Mounting Type | Surface Mount |
Number of Elements per Chip | 1 |
Number of Pins | 8 |
Package Type | SO-8 |
Power Dissipation | 2.5 W |
Series | HEXFET Series |
Temperature Operating Range | -55 to +150 °C |
Turn Off Delay Time | 17 ns |
Turn On Delay Time | 10 ns |
Typical Gate Charge @ Vgs | 26 nC @ 10 V |
Width | 0.157" (4mm) |