Infineon IRF7821PBF
MOSFET, Power,N-Ch,VDSS 30V,RDS(ON) 7 Milliohms,ID 13.6A,SO-8,PD 2.5W,VGS +/-20VWe are pleased to offer our customers Infineon products with delivery to their respective countries. Please contact us for detailed information about pricing and delivery times. In your request, kindly send information containing product codes and specific details to our [email protected] address.
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Infineon IRF7821PBF Specifications
| Property | Value |
|---|---|
| Channel Type | N |
| Configuration | Quad Drain ; Triple Source |
| Dimensions | 5.00 x 4.00 x 1.50 mm |
| Drain Current | 13.6 A |
| Drain to Source On Resistance | 12.5 mOhms |
| Drain to Source Voltage | 30 V |
| Forward Transconductance | 22 sec |
| Forward Voltage, Diode | 1 V |
| Gate to Source Voltage | ±20 V |
| Height | 0.059" (1.5mm) |
| Input Capacitance | 1010 pF @ 15 V |
| Length | 0.196 in |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Number of Pins | 8 |
| Package Type | SO-8 |
| Polarization | N-Channel |
| Power Dissipation | 2.5 W |
| Product Header | Hexfet® Power MOSFET |
| Series | HEXFET Series |
| Temperature Operating Range | -55 to +150 °C |
| Total Gate Charge | 9.3 nC |
| Turn Off Delay Time | 9.7 ns |
| Turn On Delay Time | 6.3 ns |
| Typical Gate Charge @ Vgs | 9.3 nC @ 4.5 V |
| Voltage, Breakdown, Drain to Source | 30 V |
| Width | 0 in |