Infineon IRF9952TRPBF
IRF9952TRPBF Dual N/P-channel MOSFET Transistor, 2.3 A, 3.5 A, 30 V, 8-Pin SOICWe are pleased to offer our customers Infineon products with delivery to their respective countries. Please contact us for detailed information about pricing and delivery times. In your request, kindly send information containing product codes and specific details to our [email protected] address.
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Infineon IRF9952TRPBF Specifications
| Property | Value |
|---|---|
| Alternate Mfr Part Number | 8273934 |
| Channel Type | N ; P |
| Configuration | Dual Drain |
| Dimensions | 5.00 x 4.00 x 1.50 mm |
| Drain Current | -2.3 to 3.5 A |
| Drain to Source On Resistance | 0.15 to 0.400 mOhms |
| Drain to Source Voltage | -30 to 30 V |
| Forward Transconductance | 12 (N), 2.4 (P) S |
| Forward Voltage, Diode | 0.82/-0.82 V |
| Gate to Source Voltage | ±20 V |
| Height | 0.059" (1.5mm) |
| Input Capacitance | 190 pF @ -15 V (P), 190 pF @ 15 V (N) |
| Junction to Ambient Thermal Resistance | 62.5 °C/W |
| Length | 0.196 in |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 2 |
| Number of Pins | 8 |
| Operating Temperature | -55 to 150 °C |
| Package Type | SO-8 |
| Polarization | N-Channel and P-Channel |
| Power Dissipation | 2 W |
| Series | HEXFET Series |
| Temperature Operating Range | -55 to +150 °C |
| Total Gate Charge | 6.9/6.1 nC |
| Turn Off Delay Time | 13 (N), 20 (P) ns |
| Turn On Delay Time | 6.2 (N), 9.7 (P) ns |
| Typical Gate Charge @ Vgs | 6.1 nC @ -10 V (P), 6.9 nC @ 10 V (N) |
| Voltage, Breakdown, Drain to Source | 30/-30 V |
| Width | 0 in |