Infineon IRG4PF50WPBF
900V WARP 20-100 KHZ DISCRETE IGBT IN A TO-247AC PACKAGEWe are pleased to offer our customers Infineon products with delivery to their respective countries. Please contact us for detailed information about pricing and delivery times. In your request, kindly send information containing product codes and specific details to our [email protected] address.
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Infineon IRG4PF50WPBF Specifications
Property | Value |
---|---|
Alternate Mfr Part Number | 124-8979 |
Channel Type | N |
Collector Current | 51 A |
Collector to Emitter Shorted Voltage | 900 V |
Collector to Emitter Voltage | 2.7 V |
Configuration | Dual |
Continuous Collector Current | 51 A |
Dimensions | 15.87 x 5.31 x 20.70 mm |
Energy Rating | 186 mJ |
Gate Capacitance | 3300 pF |
Gate to Emitter Voltage | +/-20 V |
Height | 0.815" (20.7mm) |
Length | 0.625 in |
Maximum Operating Temperature | +150 °C |
Minimum Operating Temperature | -55 °C |
Mounting Type | Through Hole |
Number of Pins | 3 |
Package Type | TO-247AC |
Polarity | N-Channel |
Power Dissipation | 200 W |
Product Header | Warp N-Channel IGBT |
Resistance, Thermal, Junction to Case | 0.64 °C/W |
Switching Speed | 30-150 Khz |
Temperature Operating Range | -55 to +150 °C |
Transistor Type | NPN |
Type | Warp |
Width | 0 in |