Infineon MMBT2907ALT1XT
Transistor, Bipolar,Si,PNP,Switching,VCEO 60V,IC 600mA,PD 330mW,SOT-23,VCBO 60VWe are pleased to offer our customers Infineon products with delivery to their respective countries. Please contact us for detailed information about pricing and delivery times. In your request, kindly send information containing product codes and specific details to our [email protected] address.
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Infineon MMBT2907ALT1XT Specifications
| Property | Value |
|---|---|
| Collector Current | 600 mA |
| Collector to Base Voltage | 60 V |
| Collector to Emitter Voltage | 60 V |
| Configuration | Common Base |
| Dimensions | 2.9 x 1.3 x 1 mm |
| Emitter to Base Voltage | 5 V |
| Height | 0.039" (1mm) |
| Length | 0.114" (2.9mm) |
| Material | Si |
| Maximum Operating Temperature | +150 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Number of Pins | 3 |
| Operating Frequency | 200 MHz |
| Package Type | SOT-23 |
| Polarity | PNP |
| Power Dissipation | 330 mW |
| Primary Type | Si |
| Product Header | PNP Silicon Switching Transistor |
| Temperature Operating Range | Maximum of +150 °C |
| Transistor Type | PNP |
| Type | Switching |
| Voltage, Breakdown, Collector to Emitter | 60 V |
| Voltage, Collector to Emitter, Saturation | 1.6 V |
| Voltage, Saturation, Base to Emitter | 2.6 V |
| Width | 0.051" (1.3mm) |