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NTE Electronics, Inc. NTE106
NTE Electronics, Inc. NTE106
Transistor, Bipolar,Si,PNP,Switch,VCEO 15V,IC 200mA,PD 0.36W,TO-18,VCBO 15VWe are pleased to offer our customers NTE Electronics, Inc. products with delivery to their respective countries. Please contact us for detailed information about pricing and delivery times. In your request, kindly send information containing product codes and specific details to our [email protected] address.
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NTE Electronics, Inc. NTE106 Specifications
Property | Value |
---|---|
Collector Current | 200 mA |
Collector to Base Voltage | 15 V |
Collector to Emitter Voltage | 15 V |
Configuration | Common Base |
Diameter | 5.84 mm |
Dimensions | 5.84 Dia. x 5.33 H mm |
Emitter to Base Voltage | 4.5 V |
Height | 0.21" (5.33mm) |
Material | Si |
Maximum Junction Temperature | 200 °C |
Maximum Operating Temperature | +200 °C |
Minimum Junction Temperature | -65 °C |
Minimum Operating Temperature | -65 °C |
Mounting Type | Through Hole |
Number of Elements per Chip | 1 |
Number of Pins | 3 |
Operating Frequency | 1100 MHz |
Package Type | TO-18 |
Polarity | PNP |
Power Dissipation | 1.2 W |
Primary Type | Si |
Product Header | Silicon PNP Transistor |
Series | Transistor Series |
Temperature Operating Range | -65 to +200 °C |
Transistor Type | PNP |
Type | Switch |
UPC Code | 768249008910 |
Voltage, Breakdown, Collector to Emitter | 15 V |
Voltage, Collector to Emitter, Saturation | 0.18 V |
Voltage, Saturation, Base to Emitter | 1.5 V |