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NTE Electronics, Inc. NTE159
NTE Electronics, Inc. NTE159
Transistor, Bipolar,Si,PNP,Audio Amplifier, Switch,VCEO 80V,IC 800mA,PD 625mWWe are pleased to offer our customers NTE Electronics, Inc. products with delivery to their respective countries. Please contact us for detailed information about pricing and delivery times. In your request, kindly send information containing product codes and specific details to our [email protected] address.
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NTE Electronics, Inc. NTE159 Specifications
Property | Value |
---|---|
Collector Current | 800 mA |
Collector to Base Voltage | 80 V |
Collector to Emitter Voltage | 80 V |
Configuration | Common Base |
Continuous Collector Current | 1 A |
Device Dissipation | 0.625 W |
Dimensions | 5.2 x 4.2 x 5.33 mm |
Emitter to Base Voltage | 5 V |
Height | 0.21" (5.33mm) |
Junction to Ambient Thermal Resistance | 200 °C⁄W |
Length | 0.204 in |
Material | Si |
Material Type | Silicon |
Maximum Operating Temperature | +150 °C |
Minimum Operating Temperature | -55 °C |
Mounting Type | Through Hole |
Number of Elements per Chip | 1 |
Number of Pins | 3 |
Operating Frequency | 100 MHz |
Package Type | TO-92 |
Polarity | PNP |
Power Dissipation | 625 mW |
Primary Type | Si |
Product Header | Silicon PNP Transistor |
Resistance, Thermal, Junction to Case | 83.3 °C/W |
Series | Transistor Series |
Temperature Operating Range | -55 to +150 °C |
Temperature Range, Junction, Operating | -55 to +150 C |
Transistor Polarity | PNP |
Transistor Type | PNP |
Type | Audio Amplifier, Switch |
UPC Code | 768249058717 |
Voltage, Breakdown, Collector to Emitter | 80 V |
Voltage, Collector to Emitter, Saturation | 0.15 V |
Voltage, Saturation, Base to Emitter | 1.1 V |
Voltage, Saturation, Collector to Emitter | 1.5 V |
Width | 0 in |