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NTE Electronics, Inc. NTE287
NTE Electronics, Inc. NTE287
Transistor, Bipolar,Si,NPN,General Purpose, High Voltage,VCEO 300V,IC 500mAWe are pleased to offer our customers NTE Electronics, Inc. products with delivery to their respective countries. Please contact us for detailed information about pricing and delivery times. In your request, kindly send information containing product codes and specific details to our [email protected] address.
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NTE Electronics, Inc. NTE287 Specifications
Property | Value |
---|---|
Collector Current | 500 mA |
Collector to Base Voltage | 300 V |
Collector to Emitter Voltage | 300 V |
Configuration | Common Base |
Continuous Collector Current | 500 mA |
Device Dissipation | 0.625 W |
Dimensions | 5.2 x 4.2 x 5.33 mm |
Emitter to Base Voltage | 6 V |
Height | 0.21" (5.33mm) |
Junction to Ambient Thermal Resistance | 200 °C/mW |
Length | 0.204 in |
Material | Si |
Material Type | Silicon |
Maximum Operating Temperature | +150 °C |
Minimum DC Current Gain | 40 |
Minimum Operating Temperature | -55 °C |
Mounting Type | Through Hole |
Number of Elements per Chip | 1 |
Number of Pins | 3 |
Operating Frequency | 50 MHz |
Package Type | TO-92 |
Polarity | NPN |
Power Dissipation | 625 mW |
Primary Type | Si |
Product Header | Silicon Complementary Transistor |
Resistance, Thermal, Junction to Case | 83.3 °C/mW |
Series | Transistor Series |
Temperature Operating Range | -55 to +150 °C |
Temperature Range, Junction, Operating | -55 to +150 C |
Transistor Polarity | NPN |
Transistor Type | NPN |
Type | General Purpose, High Voltage |
UPC Code | 768249123118 |
Voltage, Breakdown, Collector to Emitter | 300 V |
Voltage, Collector to Emitter, Saturation | 0.5 V |
Voltage, Saturation, Base to Emitter | 0.9 V |
Width | 0 in |