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ON Semiconductor 1N5402G
ON Semiconductor 1N5402G
DIODE GEN PURP 200V 3A DO201ADWe are pleased to offer our customers ON Semiconductor products with delivery to their respective countries. Please contact us for detailed information about pricing and delivery times. In your request, kindly send information containing product codes and specific details to our [email protected] address.
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ON Semiconductor 1N5402G Specifications
Property | Value |
---|---|
Configuration | Single |
Continuous Forward Current | 3 A |
Diameter | 5.3 mm |
Dimensions | 5.3 Dia. x 9.5 L mm |
Diode Type | Standard Recovery Rectifier |
Forward Voltage | 1 V |
Length | 0.374 in |
Maximum Junction Temperature | +150 °C |
Maximum Operating Temperature | +150 °C |
Minimum Operating Temperature | -65 °C |
Mounting Type | Through Hole |
Non Repetitive On State Peak Current | 200 A |
Number of Pins | 2 |
Operating Temperature | -65 to +150 °C |
Package Type | 267-05 |
Peak Current | 10 μA |
Primary Type | Rectifier |
Product Header | Axial Lead Standard Recovery Rectifier |
Rectifier Type | Switching |
Repetitive Peak Voltage | 200 V |
Reverse Current | 50 μA |
Series | 1N5400 Rectifier Series |
Surge Current | 200 A |
Switching Speed | Standard |
Temperature Operating Range | -65 to +150 °C |