SEMIKRON SEMIX653GD176HDC
IGBT, 1700 V, 660 A @ 25 DegC, 650 A @ 80 DegC, 1.7 V @ 25 degCWe are pleased to offer our customers SEMIKRON products with delivery to their respective countries. Please contact us for detailed information about pricing and delivery times. In your request, kindly send information containing product codes and specific details to our [email protected] address.
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SEMIKRON SEMIX653GD176HDC Specifications
| Property | Value |
|---|---|
| Collector Current | 619 A |
| Collector to Emitter Shorted Voltage | 1700 V |
| Collector to Emitter Voltage | 1700 V |
| Configuration | Array |
| Continuous Collector Current | 619 A |
| Dimensions | 149.5 x 163 x 17 mm |
| Energy Rating | 480 mJ |
| Gate Capacitance | 39.6 nF |
| Gate to Emitter Voltage | 20 V |
| Height | 0.669" (17mm) |
| Length | 5.885 in |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Pins | 29 |
| Package Type | SEMIX 33c |
| Polarity | N-Channel |
| Primary Type | Si |
| Product Header | Trench N-Channel IGBT Module |
| Resistance, Thermal, Junction to Case | 0.054 K/W |
| Series | IGBT Series |
| Temperature Operating Range | -55 to +150 °C |
| Transistor Type | IGBT |
| Type | Trench |
| Voltage, Saturation, Collector to Emitter | 1.7 V @ 25°C (Typ.) |
| Width | 0 in |