SEMIKRON SKM 145 GB 123 D

IGBT, SEMITRANS 2, D-61, 1200 V, 145 A, 1200 V, 145 A, 1200 V

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SEMIKRON SKM 145 GB 123 D Specifications

Property	Value
Collector Current	145 A
Collector to Emitter Shorted Voltage	1200 V
Energy Rating	28 mJ
Fall Time	70 ns
Gate Capacitance	6.5 nF
Gate to Source Voltage	±20 V
Operating and Storage Temperature	–40 to +150 °C
Package Type	D61
Polarity	N-Channel
Primary Type	Si
Product Header	N-Channel IGBT Module
Resistance, Thermal, Junction to Case	0.15 K/W
Rise Time	80
Series	IGBT Series
Transistor Type	IGBT
Type	Standard
Voltage, Breakdown, Collector to Emitter	1200 V
Voltage, Collector to Emitter, Saturation	2.5 V
Voltage, Saturation, Collector to Emitter	1200 V