Siliconix / Vishay SI4559ADY-T1-GE3
MOSFET, N-Ch/P-Ch, Vds 60V, Vgs +/- 20V, Rds(on) 46mohm, Id 4.5A, SO-8, Pd 3.4WWe are pleased to offer our customers Siliconix / Vishay products with delivery to their respective countries. Please contact us for detailed information about pricing and delivery times. In your request, kindly send information containing product codes and specific details to our [email protected] address.
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Siliconix / Vishay SI4559ADY-T1-GE3 Specifications
| Property | Value |
|---|---|
| Channel Type | N ; P |
| Configuration | Dual Gate ; Dual Source ; Quad Drain |
| Dimensions | 5 x 4 x 1.55 mm |
| Drain Current | -2.4 to 5.3 A |
| Drain to Source On Resistance | 0.072 to 0.15 Ohms |
| Drain to Source Voltage | -60 to 60 V |
| Forward Transconductance | 15 (N), 8.5 (P) S |
| Forward Voltage, Diode | -1.2 (P), 1.2 (N) V |
| Gate to Source Voltage | ±20 V |
| Height | 0.061" (1.55mm) |
| Input Capacitance | 650 pF @ -15 V (P), 665 pF @ 15 V (N) |
| Length | 0.196 in |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 2 |
| Number of Pins | 8 |
| Package Type | SO-8 |
| Power Dissipation | 3.1 ; 3.4 W |
| Series | SI45 Series |
| Temperature Operating Range | -55 to +150 °C |
| Turn Off Delay Time | 20 (N), 40 (P) ns |
| Turn On Delay Time | 15 (N), 30 (P) ns |
| Typical Gate Charge @ Vgs | 13 nC @ 10 V (N-Channel), 14.5 nC @ -10 V (P-Channel |
| Width | 0 in |