Siliconix / Vishay SI4850EY-T1-E3
Power MOSFET,N-Ch,VDSS 60V,RDS(ON) 0.018Ohm,ID 6A,SO-8,PD 1.7W,VGS+/-20V,gFS 25SWe are pleased to offer our customers Siliconix / Vishay products with delivery to their respective countries. Please contact us for detailed information about pricing and delivery times. In your request, kindly send information containing product codes and specific details to our [email protected] address.
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Siliconix / Vishay SI4850EY-T1-E3 Specifications
| Property | Value |
|---|---|
| Channel Type | N |
| Configuration | Quad Drain ; Triple Source |
| Dimensions | 5 x 4 x 1.55 mm |
| Drain Current | 7.2 A |
| Drain to Source On Resistance | 0.047 Ohms |
| Drain to Source Voltage | 60 V |
| Forward Transconductance | 25 S |
| Forward Voltage, Diode | 0.8 V |
| Gate to Source Voltage | ±20 V |
| Height | 0.061" (1.55mm) |
| Length | 0.196 in |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Number of Pins | 8 |
| Package Type | SO-8 |
| Polarization | N-Channel |
| Power Dissipation | 1.7 W |
| Product Header | TrenchFET® Power MOSFET |
| Series | SI48 Series |
| Temperature Operating Range | -55 to +150 °C |
| Total Gate Charge | 18 nC |
| Turn Off Delay Time | 25 ns |
| Turn On Delay Time | 10 ns |
| Typical Gate Charge @ Vgs | 18 nC @ 13 V |
| Voltage, Breakdown, Drain to Source | 60 V |
| Width | 0 in |