Siliconix / Vishay SI1026X-T1-GE3
SI1026X-T1-GE3 Dual N-channel MOSFET Transistor, 0.3 A, 60 V, 6-Pin SC-89We are pleased to offer our customers Siliconix / Vishay products with delivery to their respective countries. Please contact us for detailed information about pricing and delivery times. In your request, kindly send information containing product codes and specific details to our [email protected] address.
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Siliconix / Vishay SI1026X-T1-GE3 Specifications
| Property | Value |
|---|---|
| Channel Type | N |
| Configuration | Single |
| Dimensions | 1.7 x 1.2 x 0.5 mm |
| Drain Current | 305 A |
| Drain to Source On Resistance | 3 Ohms |
| Drain to Source Voltage | 60 V |
| Forward Transconductance | 200 mS |
| Forward Voltage, Diode | 1.4 V |
| Gate to Source Voltage | ±20 V |
| Height | 0.02" (0.5mm) |
| Input Capacitance | 30 pF @ 25 V |
| Length | 0.066 in |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 2 |
| Number of Pins | 6 |
| Operating and Storage Temperature | -55 TO +150 C |
| Package Type | SC-89 |
| Polarization | N-Channel |
| Power Dissipation | 250 mW |
| Series | SI10 Series |
| Temperature Operating Range | -55 to +150 °C |
| Total Gate Charge | 600 pC |
| Turn Off Delay Time | 20 ns |
| Turn On Delay Time | 15 ns |
| Typical Gate Charge @ Vgs | 600 nC @ 4.5 V |
| Voltage, Breakdown, Drain to Source | 60 V |
| Width | 0.047 in |