Siliconix / Vishay SI1032X-T1-E3
20V (D-S) N-CH MOSFET W/ESD PROTECTWe are pleased to offer our customers Siliconix / Vishay products with delivery to their respective countries. Please contact us for detailed information about pricing and delivery times. In your request, kindly send information containing product codes and specific details to our [email protected] address.
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Siliconix / Vishay SI1032X-T1-E3 Specifications
| Property | Value |
|---|---|
| Channel Type | N |
| Configuration | Single |
| Dimensions | 1.7 x 0.95 x 0.8 mm |
| Drain Current | 200 mA |
| Drain to Source On Resistance | 10 Ohms |
| Drain to Source Voltage | 20 V |
| Forward Transconductance | 0.5 S |
| Forward Voltage, Diode | 1.2 V |
| Gate to Source Voltage | ±6 V |
| Height | 0.031" (0.8mm) |
| Length | 0.066 in |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Number of Pins | 3 |
| Operating and Storage Temperature | -55 TO +150 C |
| Package Type | SC-75A, SC-89 |
| Polarization | N-Channel |
| Power Dissipation | 300 mW |
| Series | SI10 Series |
| Temperature Operating Range | -55 to +150 °C |
| Total Gate Charge | 330 pC |
| Turn Off Delay Time | Maximum of 50 ns |
| Turn On Delay Time | Maximum of 50 ns |
| Typical Gate Charge @ Vgs | 750 nC @ 4.5 V |
| Voltage, Breakdown, Drain to Source | 20 V |
| Width | 0.037 in |