Siliconix / Vishay SI1034X-T1-E3

MOSFET, Power,N-Ch,VDSS 20V,RDS(ON) 5 Ohms,ID 180mA,SC-89 (SOT-490),PD 250mW

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Siliconix / Vishay SI1034X-T1-E3 Specifications

Property	Value
Channel Type	N
Drain Current	180 mA
Drain to Source On Resistance	5 Ohm
Forward Transconductance	0.5 S
Forward Voltage, Diode	1.2 V
Gate to Source Voltage	±5 V
Maximum Operating Temperature	+150 °C
Minimum Operating Temperature	-55 °C
Package Type	SC-89 (SOT-490)
Polarization	N-Channel
Power Dissipation	250 mW
Product Header	TrenchFET® Power MOSFET
Series	SI10 Series
Total Gate Charge	750 pC
Turn Off Delay Time	50 ns
Turn On Delay Time	50 ns
Voltage, Breakdown, Drain to Source	20 V