Siliconix / Vishay SI6968BEDQ-T1-E3
SI6968BEDQ-T1-E3 N-channel MOSFET Module, 5.2 A, 20 V, 8-Pin TSSOPWe are pleased to offer our customers Siliconix / Vishay products with delivery to their respective countries. Please contact us for detailed information about pricing and delivery times. In your request, kindly send information containing product codes and specific details to our [email protected] address.
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Siliconix / Vishay SI6968BEDQ-T1-E3 Specifications
| Property | Value |
|---|---|
| Channel Type | N |
| Configuration | Dual Drain ; Dual Gate ; Quad |
| Dimensions | 4.5 x 3.1 x 1.05 mm |
| Drain Current | 6.5 A |
| Drain to Source On Resistance | 0.022 Ohms |
| Drain to Source Voltage | 20 V |
| Fall Time | 765 ns |
| Forward Transconductance | 30 S |
| Forward Voltage, Diode | 1.2 V |
| Gate to Source Voltage | ±12 V |
| Height | 0.041" (1.05mm) |
| Junction to Ambient Thermal Resistance | 83 °C/W |
| Length | 0.177 in |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 2 |
| Number of Pins | 8 |
| Package Type | TSSOP |
| Polarization | N-Channel |
| Power Dissipation | 1.5 W |
| Series | SI69 Series |
| Temperature Operating Range | -55 to +150 °C |
| Total Gate Charge | 1.5 nC |
| Turn Off Delay Time | 1300 ns |
| Turn On Delay Time | 365 ns |
| Typical Gate Charge @ Vgs | 12 nC @ 10 V |
| Voltage, Breakdown, Drain to Source | 20 V |
| Width | 0 in |