Siliconix / Vishay SIRA04DP-T1-GE3
Semiconcuctor,Mosfet;TrenchFET;N-Channel;30V;40A;2.15mohm @ 10V;PowerPAK SO-8We are pleased to offer our customers Siliconix / Vishay products with delivery to their respective countries. Please contact us for detailed information about pricing and delivery times. In your request, kindly send information containing product codes and specific details to our [email protected] address.
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Siliconix / Vishay SIRA04DP-T1-GE3 Specifications
| Property | Value |
|---|---|
| Channel Type | N |
| Configuration | Quad Drain ; Triple Source |
| Dimensions | 5.99 x 5 x 1.07 mm |
| Drain Current | 40 A |
| Drain to Source On Resistance | 0.0031 Ohms |
| Drain to Source Voltage | 30 V |
| Fall Time | 16 ns |
| Forward Transconductance | 105 S |
| Forward Voltage, Diode | 1.1 V |
| Gate to Source Voltage | -16, 20 V |
| Height | 0.042" (1.07mm) |
| Input Capacitance | 3595 pF @ 15 V |
| Junction to Ambient Thermal Resistance | 25 °C/W |
| Length | 0.235 in |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Number of Pins | 8 |
| Operating and Storage Temperature | -55 to 150 C |
| Package Type | PowerPAK-SO-8 |
| Polarization | N-Channel |
| Power Dissipation | 62.5 W |
| Resistance, Thermal, Junction to Case | 4.5 °C/W |
| Series | TrenchFET Series |
| Temperature Operating Range | -55 to +150 °C |
| Total Gate Charge | 22.5 nC |
| Turn Off Delay Time | 30 ns |
| Turn On Delay Time | 24 ns |
| Typical Gate Charge @ Vgs | 51 nC @ 10 V |
| Voltage, Breakdown, Drain to Source | 30 V |
| Width | 0 in |