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Siliconix / Vishay SUM110N04-05H-E3
Siliconix / Vishay SUM110N04-05H-E3
MOSFET, Power,N-Ch,VDSS 40V,RDS(ON) 0.0044Ohm,ID 110A,TO-263,PD 150W,VGS 20VWe are pleased to offer our customers Siliconix / Vishay products with delivery to their respective countries. Please contact us for detailed information about pricing and delivery times. In your request, kindly send information containing product codes and specific details to our [email protected] address.
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Siliconix / Vishay SUM110N04-05H-E3 Specifications
Property | Value |
---|---|
Application | Automotive such as high-side switch, motor drives, 12 V batt |
Channel Type | N |
Configuration | Single |
Dimensions | 10.414 x 9.652 x 4.826 mm |
Drain Current | 110 A |
Drain to Source On Resistance | 0.0106 Ohms |
Drain to Source Voltage | 40 V |
Fall Time | 12 nS |
Forward Transconductance | 50 S |
Forward Voltage, Diode | 0.9 V |
Gate to Source Voltage | ±20 V |
Height | 0.19" (4.826mm) |
Input Capacitance | 6700 pF @ 25 V |
Junction to Ambient Thermal Resistance | 40 °C⁄W |
Length | 0.41 in |
Maximum Operating Temperature | +175 °C |
Minimum Operating Temperature | -55 °C |
Mounting Type | Surface Mount |
Number of Elements per Chip | 1 |
Number of Pins | 3 |
Operating and Storage Temperature | -55 to +175 C |
Package Type | TO-263 |
Polarization | N-Channel |
Power Dissipation | 150 W |
Product Header | TrenchFET® Power MOSFET |
Resistance, Thermal, Junction to Case | 1 °C/W |
Series | SUM Series |
Temperature Operating Range | -55 to +175 °C |
Total Gate Charge | 95 nC |
Turn Off Delay Time | 50 ns |
Turn On Delay Time | 20 ns |
Typical Gate Charge @ Vgs | 95 nC @ 10 V |
Voltage, Breakdown, Drain to Source | 40 V |
Width | 0 in |