SEMIKRON Thyristor; Capsule; 1600V; 1700V; 350A IT(RMS); 500mA Holding (Max.); TO-200AB

SEMIKRON IGBT, D-61, IGBT, 600 V, 130 A, 600 V, 130 A, 600 V, -40 to 150 degC

SEMIKRON IGBT, 1200 V, 490 A @ 25 DegC, 480 A @ 80 DegC, 1.7 V @ 25 degC

SEMIKRON IGBT, 1200 V, 700 A @ 25 DegC, 700 A @ 80 DegC, 1.7 V @ 25 degC

SEMIKRON Thyristor Diode Module, 1.4 V (Max.), 3600/3000 V (RMS), 0.14/0.07 K/W

SEMIKRON IGBT, 1700 V, 460 A @ 25 DegC, 450 A @ 80 DegC, 1.7 V @ 25 degC

SEMIKRON IGBT, 1700 V, 660 A @ 25 DegC, 650 A @ 80 DegC, 1.7 V @ 25 degC

SEMIKRON Diode, Rectifier, Standard, Vr 600V, If 1A, Pkg DO-213AB (Melf), Vf 1.1V, IT 8As

SEMIKRON Diode, Rectifier, Fast, Vr 1000V, If 2A, Pkg DO-214AA (SMB), Vf 1.3V, IT 12.5As

SEMIKRON Diode, Rectifier, Fast, Vr 1000V, If 1A, Pkg DO-214AC (SMA), Vf 1.3V, IT 4.5As, Cs 30A

SEMIKRON Module, Transistor, N-Channel IGBT, 1700 V, 220 A @ degC, 20 V, Case D 56

SEMIKRON Rectifier, Bridge, Three-Phase Silicon Bridge Rectifier, 30 A, 50 to 1600 V, 10

SEMIKRON Bridge Rectifier Module, 3-phase 150A 1600V 7-Pin G 36, Bridge Rectifier Series

SEMIKRON Diode, Rectifier, Standard, Vr 26.7V, If 25A, Pkg DO-214AA (SMB), Vf <3V, Tj +150degc

SEMIKRON Diode, Zener, Standard, Vr 70V, Pkg DO-213AB (Melf), Tj +150degc, Pd 1.3W, Ir 10mA

SEMIKRON IGBT, Ultra Fast, IGBT, 1200 V, 400 A @ degC, 20 V, 390 A @ 25 degC, -40

SEMIKRON IGBT, Power, 1200 V, 200 A @ degC, 20 V, 200 A @ 25 degC, 10 nF (Typ.)

SEMIKRON IGBT, Ultra Fast, IGBT, 1200 V, 400 A at degC, 20 V, 390 A at 25 degC, -40

SEMIKRON IGBT, 1200 V, 300 A @ DegC, 20 V, Case D 56

SEMIKRON IGBT, 1 V (Typ.) @ degC VCE, 470 A @ degC, 400 A @ degC, 50 ns