General Semiconductor / Vishay MBRB10100-E3/8W
Diode,Schottky Barrier,Vr 100V,If 10A,Pkg TO-263AB,Vf 0.65V,Tj +150degc,Cs 150AWe are pleased to offer our customers General Semiconductor / Vishay products with delivery to their respective countries. Please contact us for detailed information about pricing and delivery times. In your request, kindly send information containing product codes and specific details to our [email protected] address.
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General Semiconductor / Vishay MBRB10100-E3/8W Specifications
| Property | Value |
|---|---|
| Configuration | Single |
| Continuous Forward Current | 10 A |
| Dimensions | 10.45 x 4.83 x 9.14 mm |
| Diode Type | Schottky |
| Forward Voltage | 0.65 V |
| Height | 0.36" (9.14mm) |
| Length | 0.411 in |
| Maximum Junction Temperature | +150 °C |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -65 °C |
| Mounting Type | Through Hole |
| Non Repetitive On State Peak Current | 150 A |
| Number of Pins | 2 |
| Operating Temperature | -65 to +150 °C |
| Package Type | TO-263AB |
| Peak Current | 6000 μA |
| Primary Type | Schottky Barrier |
| Product Header | High Voltage Schottky Rectifier |
| Repetitive Peak Voltage | 100 V |
| Resistance, Thermal, Junction to Case | 2 °C/W |
| Reverse Current | 6 mA |
| Series | MBR Series |
| Surge Current | 150 A |
| Temperature Operating Range | -65 to +150 °C |
| Width | 0 in |