General Semiconductor / Vishay S1M-E3/61T
DIODE GEN PURP 1KV 1A DO214ACWe are pleased to offer our customers General Semiconductor / Vishay products with delivery to their respective countries. Please contact us for detailed information about pricing and delivery times. In your request, kindly send information containing product codes and specific details to our [email protected] address.
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General Semiconductor / Vishay S1M-E3/61T Specifications
| Property | Value |
|---|---|
| Configuration | Single |
| Continuous Forward Current | 1 A |
| Dimensions | 4.50 x 2.79 x 2.087 mm |
| Diode Type | Glass Passivated Rectifier |
| Forward Voltage | 1.1 V |
| Height | 0.082" (2.087mm) |
| Junction Capacitance | 12 pF |
| Length | 0.177 in |
| Maximum Junction Temperature | +150 °C |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Non Repetitive On State Peak Current | 30 A |
| Number of Pins | 2 |
| Operating Temperature | -55 to +150 °C |
| Package Type | DO-214AC |
| Peak Current | 50 μA |
| Primary Type | Rectifier |
| Product Header | Surface Mount Glass Passivated Rectifier |
| Recovery Time | 1.8 μs |
| Repetitive Peak Voltage | 1000 V |
| Reverse Current | 50 μA |
| Reverse Recovery Time | 1800 ns |
| Series | S1M Series |
| Surge Current | 30 A |
| Switching Speed | Standard |
| Temperature Operating Range | -55 to +150 °C |
| Width | 0 in |