Infineon IRF7338PBF
12V DUAL N- AND P- CHANNEL HEXFET POWER MOSFET IN A SO-8 PACKAGEWe are pleased to offer our customers Infineon products with delivery to their respective countries. Please contact us for detailed information about pricing and delivery times. In your request, kindly send information containing product codes and specific details to our [email protected] address.
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Infineon IRF7338PBF Specifications
| Property | Value |
|---|---|
| Drain Current | 6.3/-3 A |
| Drain to Source On Resistance | 0.034/0.15 Ohms |
| Forward Transconductance | 9.2/3.5 S |
| Forward Voltage, Diode | 1.3/-1.2 V |
| Gate to Source Voltage | ±12/±8 V |
| Junction to Ambient Thermal Resistance | 62.5 °C/W |
| Operating Temperature | -55 to 150 °C |
| Package Type | SO-8 |
| Polarization | N-Channel and P-Channel |
| Power Dissipation | 2 W |
| Series | HEXFET Series |
| Total Gate Charge | 8.6/6.6 nC |
| Turn Off Delay Time | 26/27 ns |
| Turn On Delay Time | 6/9.6 ns |
| Type | Power |
| Voltage, Breakdown, Drain to Source | 12/-12 V |