Infineon IRF7404TRPBF
MOSFET, Power,P-Ch,VDSS -20V,RDS(ON) 0.04Ohm,ID -6.7A,SO-8,PD 2.5W,VGS +/-12VWe are pleased to offer our customers Infineon products with delivery to their respective countries. Please contact us for detailed information about pricing and delivery times. In your request, kindly send information containing product codes and specific details to our [email protected] address.
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Infineon IRF7404TRPBF Specifications
| Property | Value |
|---|---|
| Channel Type | P |
| Configuration | Quad Drain ; Triple Source |
| Dimensions | 5.00 x 4.00 x 1.50 mm |
| Drain Current | -6.7 A |
| Drain to Source On Resistance | 0.06 Ohms |
| Drain to Source Voltage | -20 V |
| Forward Transconductance | 6.8 S |
| Forward Voltage, Diode | -1 V |
| Gate to Source Voltage | ±12 V |
| Height | 0.059" (1.5mm) |
| Input Capacitance | 1500 pF @ -15 V |
| Length | 0.196 in |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Number of Pins | 8 |
| Package Type | SO-8 |
| Polarization | P-Channel |
| Power Dissipation | 2.5 W |
| Product Header | Hexfet® Power MOSFET |
| Resistance, Thermal, Junction to Case | 50 °C/W |
| Series | HEXFET Series |
| Temperature Operating Range | -55 to +150 °C |
| Total Gate Charge | 50 nC |
| Turn Off Delay Time | 100 ns |
| Turn On Delay Time | 14 ns |
| Typical Gate Charge @ Vgs | Maximum of 50 nC @ -4.5 V |
| Voltage, Breakdown, Drain to Source | -20 V |
| Width | 0 in |