Infineon IRF8910PBF
IRF8910PBF Dual N-channel MOSFET Transistor, 10 A, 20 V, 8-Pin SOICWe are pleased to offer our customers Infineon products with delivery to their respective countries. Please contact us for detailed information about pricing and delivery times. In your request, kindly send information containing product codes and specific details to our [email protected] address.
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Infineon IRF8910PBF Specifications
| Property | Value |
|---|---|
| Drain Current | 10 A |
| Drain to Source On Resistance | 0.0134 Ohms |
| Forward Transconductance | 24 S |
| Forward Voltage, Diode | 1 V |
| Gate to Source Voltage | ±20 V |
| Junction to Ambient Thermal Resistance | 62.5 °C/W |
| Operating Temperature | -55 to 150 °C |
| Package Type | SO-8 |
| Polarization | N-Channel |
| Power Dissipation | 2 W |
| Series | HEXFET Series |
| Total Gate Charge | 7.4 nC |
| Turn Off Delay Time | 9.7 ns |
| Turn On Delay Time | 6.2 ns |
| Type | Dual Power |
| Voltage, Breakdown, Drain to Source | 20 V |