Infineon IRLZ34NPBF
MOSFET, Power,N-Ch,VDSS 55V,RDS(ON) 0.035Ohm,ID 30A,TO-220AB,PD 68W,VGS +/-16VWe are pleased to offer our customers Infineon products with delivery to their respective countries. Please contact us for detailed information about pricing and delivery times. In your request, kindly send information containing product codes and specific details to our [email protected] address.
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Infineon IRLZ34NPBF Specifications
| Property | Value |
|---|---|
| Channel Type | N |
| Configuration | Single |
| Dimensions | 10.54 x 4.69 x 15.24 mm |
| Drain Current | 30 A |
| Drain to Source On Resistance | 0.06 Ohms |
| Drain to Source Voltage | 55 V |
| Forward Transconductance | 11 sec |
| Forward Voltage, Diode | 1.3 V |
| Gate to Source Voltage | ± 16 V |
| Height | 0.6" (15.24mm) |
| Input Capacitance | 880 pF @ 25 V |
| Length | 0.414 in |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Number of Pins | 3 |
| Package Type | TO-220AB |
| Polarization | N-Channel |
| Power Dissipation | 68 W |
| Product Header | Hexfet® Power MOSFET |
| Series | HEXFET Series |
| Temperature Operating Range | -55 to +175 °C |
| Total Gate Charge | 25 nC |
| Turn Off Delay Time | 21 ns |
| Turn On Delay Time | 8.9 ns |
| Typical Gate Charge @ Vgs | Maximum of 25 nC @ 5 V |
| Voltage, Breakdown, Drain to Source | 55 V |
| Width | 0 in |