NTE Electronics, Inc. NTE112
Diode,Schottky Barrier,Ultrafast,Vr 5V,If 30mA,Pkg DO-35,Vf 0.55V,Cj 1pF,Cs 60mAWe are pleased to offer our customers NTE Electronics, Inc. products with delivery to their respective countries. Please contact us for detailed information about pricing and delivery times. In your request, kindly send information containing product codes and specific details to our [email protected] address.
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NTE Electronics, Inc. NTE112 Specifications
| Property | Value |
|---|---|
| Breakdown Voltage | 5 V |
| Configuration | Single |
| Continuous Forward Current | 30 mA |
| Diameter | 2.28 mm |
| Dimensions | 2.28 Dia. x 5.08 L mm |
| Diode Type | Schottky |
| Forward Voltage | 0.55 V |
| Junction Capacitance | 1.125 pF |
| Junction to Ambient Thermal Resistance | 400 °C⁄W |
| Length | 0.2 in |
| Maximum Junction Temperature | 125 °C |
| Maximum Operating Temperature | +125 °C |
| Mounting Type | Through Hole |
| Non Repetitive On State Peak Current | 60 mA |
| Number of Pins | 2 |
| Package Type | Axial |
| Peak Current | 0.05 μA |
| Primary Type | Schottky Barrier |
| Product Header | Silicon Small Signal Schottky Diode |
| Rectifier Type | Switching |
| Repetitive Peak Voltage | 50 V |
| Reverse Current | 0.05 μA |
| Series | Diode Rectifier Series |
| Surge Current | 60 mA |
| Switching Speed | Ultrafast |
| Temperature Operating Range | Maximum of +125 °C |
| UPC Code | 768249013518 |