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NTE Electronics, Inc. NTE172A
NTE Electronics, Inc. NTE172A
Transistor, Darlington,Si,NPN,Amplifier, High Gain,Vo 40V,VI 12V,Io 300mA,TO-92We are pleased to offer our customers NTE Electronics, Inc. products with delivery to their respective countries. Please contact us for detailed information about pricing and delivery times. In your request, kindly send information containing product codes and specific details to our [email protected] address.
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NTE Electronics, Inc. NTE172A Specifications
Property | Value |
---|---|
Collector Current | 300 mA |
Collector to Base Voltage | 40 V |
Collector to Emitter Voltage | 40 V |
Configuration | Common Base |
Dimensions | 5.2 x 4.2 x 5.33 mm |
Emitter to Base Voltage | 12 V |
Height | 0.21" (5.33mm) |
Input Capacitance | 10.5 pF |
Input Voltage | 12 V |
Length | 0.204 in |
Material | Si |
Maximum Operating Temperature | +125 °C |
Minimum DC Current Gain | 20000 |
Minimum Operating Temperature | -65 °C |
Mounting Type | Through Hole |
Number of Elements per Chip | 2 |
Number of Pins | 3 |
Output Current | 0.3 A |
Output Voltage | 40 VDC |
Package Type | TO-92 |
Polarity | NPN |
Power Dissipation | 400 mW |
Primary Type | Si |
Product Header | NPN Darlington Silicon Transistor |
Series | Transistor Series |
Temperature Operating Range | -65 to +125 °C |
Transistor Polarity | NPN |
Transistor Type | NPN |
Type | Amplifier, High Gain |
UPC Code | 768249071211 |
Voltage, Collector to Emitter, Saturation | 1.4 V |
Voltage, Saturation, Base to Emitter | 1.6 V |
Voltage, Saturation, Collector to Emitter | 1.4 V |
Width | 0 in |