NTE Electronics, Inc. NTE175
Transistor, Bipolar,Si,NPN,Amplifier, High Voltage,VCEO 300V,IC 2A,PD 35W,TO-66We are pleased to offer our customers NTE Electronics, Inc. products with delivery to their respective countries. Please contact us for detailed information about pricing and delivery times. In your request, kindly send information containing product codes and specific details to our [email protected] address.
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NTE Electronics, Inc. NTE175 Specifications
| Property | Value |
|---|---|
| Collector Current | 5 A |
| Collector to Base Voltage | 500 V |
| Collector to Emitter Voltage | 300 V |
| Configuration | Common Base |
| Device Dissipation | 40 W |
| Diameter | 12.3 mm |
| Dimensions | 12.3 Dia. x 7.5 H mm |
| Emitter to Base Voltage | 6 V |
| Height | 0.295" (7.5mm) |
| Material | Si |
| Material Type | Silicon |
| Maximum Operating Temperature | +200 °C |
| Minimum DC Current Gain | 40 |
| Minimum Operating Temperature | -65 °C |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Number of Pins | 2 |
| Operating Frequency | 15 MHz |
| Package Type | TO-66 |
| Polarity | NPN |
| Power Dissipation | 35 W |
| Primary Type | Si |
| Product Header | Silicon Complementary Transistor |
| Resistance, Thermal, Junction to Case | 5 °C/W |
| Series | Transistor Series |
| Temperature Operating Range | -65 to +200 °C |
| Transistor Polarity | NPN |
| Transistor Type | NPN |
| Type | Amplifier, High Voltage |
| UPC Code | 768249074410 |
| Voltage, Breakdown, Collector to Emitter | 300 V |
| Voltage, Collector to Emitter, Saturation | 0.75 V |
| Voltage, Saturation, Base to Emitter | 1.4 V |
| Voltage, Saturation, Collector to Emitter | 0.75 V |