ON Semiconductor PZT2907AT1G
Transistor, Bipolar,Si,PNP,Switching,VCEO -60VDC,IC -600mA,PD 1.5W,SOT-223We are pleased to offer our customers ON Semiconductor products with delivery to their respective countries. Please contact us for detailed information about pricing and delivery times. In your request, kindly send information containing product codes and specific details to our [email protected] address.
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ON Semiconductor PZT2907AT1G Specifications
| Property | Value |
|---|---|
| Collector Current | -600 mA |
| Collector to Base Voltage | -60 V |
| Collector to Emitter Voltage | -60 V |
| Configuration | Common Base |
| Dimensions | 6.70 x 3.70 x 1.65 mm |
| Emitter to Base Voltage | -5 V |
| Height | 0.065" (1.65mm) |
| Length | 0.263 in |
| Material | Si |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -65 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Number of Pins | 4 |
| Operating Frequency | 200 MHz |
| Package Type | SOT-223 |
| Polarity | PNP |
| Power Dissipation | 1.5 W |
| Primary Type | Si |
| Product Header | PNP Silicon Epitaxial Transistor |
| Series | PZT Series |
| Temperature Operating Range | -65 to +150 °C |
| Transistor Type | PNP |
| Type | Switching |
| Voltage, Breakdown, Collector to Emitter | -60 V |
| Voltage, Collector to Emitter, Saturation | -1.6 V |
| Voltage, Saturation, Base to Emitter | -2.6 V |
| Width | 0 in |