SEMIKRON SEMIX 202GB12T4S
IGBT Module, Trench, Half-Bridge, 1200 V, 314 A Max., SEMiX 2sWe are pleased to offer our customers SEMIKRON products with delivery to their respective countries. Please contact us for detailed information about pricing and delivery times. In your request, kindly send information containing product codes and specific details to our [email protected] address.
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SEMIKRON SEMIX 202GB12T4S Specifications
| Property | Value |
|---|---|
| Channel Type | N |
| Collector Current | 314 A |
| Collector to Emitter Shorted Voltage | 1200 V |
| Collector to Emitter Voltage | 1200 V |
| Configuration | Dual |
| Continuous Collector Current | 314 A |
| Dimensions | 116.5 x 61.5 x 17 mm |
| Energy Rating | 43 mJ |
| Gate Capacitance | 12.3 nF |
| Gate to Emitter Voltage | 20 V |
| Height | 0.669" (17mm) |
| Length | 4.586" (116.5mm) |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -40 °C |
| Mounting Type | Screw |
| Number of Pins | 16 |
| Package Type | SEMIX 2s |
| Polarity | N-Channel |
| Primary Type | Si |
| Product Header | Trench N-Channel IGBT Module |
| Resistance, Thermal, Junction to Case | 0.14 K/W |
| Series | IGBT Series |
| Temperature Operating Range | -40 to +175 °C |
| Type | Trench |
| Width | 2.421" (61.5mm) |