Siliconix / Vishay SI3493DV-T1-E3
MOSFET, Power,P-Ch,VDSS -20V,RDS(ON) 0.022Ohm,ID -5.3A,TSOP-6,PD 1.1W,VGS +/-8VWe are pleased to offer our customers Siliconix / Vishay products with delivery to their respective countries. Please contact us for detailed information about pricing and delivery times. In your request, kindly send information containing product codes and specific details to our [email protected] address.
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Siliconix / Vishay SI3493DV-T1-E3 Specifications
| Property | Value |
|---|---|
| Channel Type | P |
| Configuration | Quad Drain |
| Dimensions | 3.1 x 1.7 x 1 mm |
| Drain Current | -3.9 A |
| Drain to Source On Resistance | 0.048 Ohms |
| Drain to Source Voltage | -20 V |
| Fall Time | 130 ns |
| Forward Transconductance | 25 S |
| Forward Voltage, Diode | -0.7 V |
| Gate to Source Voltage | ±8 V |
| Height | 0.039" (1mm) |
| Junction to Ambient Thermal Resistance | 62.5 °C/W |
| Length | 0.12 in |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Number of Pins | 6 |
| Operating and Storage Temperature | -55 to +150 C |
| Package Type | TSOP |
| Polarization | P-Channel |
| Power Dissipation | 1.9 W |
| Product Header | TrenchFET® Power MOSFET |
| Series | SI34 Series |
| Temperature Operating Range | -55 to +150 °C |
| Total Gate Charge | 21 nC |
| Turn Off Delay Time | 125 ns |
| Turn On Delay Time | 20 ns |
| Typical Gate Charge @ Vgs | 21 nC @ -10 V |
| Voltage, Breakdown, Drain to Source | -20 V |
| Width | 0 in |