Siliconix / Vishay SI4946BEY-T1-E3
Dual N-channel MOSFET Transistor 6.5 A 60 V 8-Pin SOICWe are pleased to offer our customers Siliconix / Vishay products with delivery to their respective countries. Please contact us for detailed information about pricing and delivery times. In your request, kindly send information containing product codes and specific details to our [email protected] address.
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Siliconix / Vishay SI4946BEY-T1-E3 Specifications
| Property | Value |
|---|---|
| Channel Type | N |
| Configuration | Dual Gate ; Dual Source ; Quad Drain |
| Dimensions | 5 x 4 x 1.55 mm |
| Drain Current | 6.5 A |
| Drain to Source On Resistance | 0.052 Ohms |
| Drain to Source Voltage | 60 V |
| Forward Transconductance | 24 S |
| Forward Voltage, Diode | 1.2 V |
| Gate to Source Voltage | ±20 V |
| Height | 0.061" (1.55mm) |
| Input Capacitance | 840 pF @ 30 V |
| Junction to Ambient Thermal Resistance | 50 °C/W |
| Length | 0.196 in |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 2 |
| Number of Pins | 8 |
| Operating Temperature | -55 to 175 °C |
| Package Type | SO-8 |
| Polarization | N-Channel |
| Power Dissipation | 3.7 W |
| Series | SI49 Series |
| Temperature Operating Range | -55 to +175 °C |
| Total Gate Charge | 17 nC |
| Turn Off Delay Time | 25 ns |
| Turn On Delay Time | 20 ns |
| Typical Gate Charge @ Vgs | 17 nC @ 10 V |
| Voltage, Breakdown, Drain to Source | 60 V |
| Width | 0 in |