Siliconix / Vishay SI6933DQ-T1-E3
P-CHAN 30V TRENCH 32M CELL MOSFET DWe are pleased to offer our customers Siliconix / Vishay products with delivery to their respective countries. Please contact us for detailed information about pricing and delivery times. In your request, kindly send information containing product codes and specific details to our [email protected] address.
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Siliconix / Vishay SI6933DQ-T1-E3 Specifications
| Property | Value |
|---|---|
| Channel Type | P |
| Configuration | Dual Drain ; Dual Gate ; Quad |
| Dimensions | 4.5 x 3.1 x 1.05 mm |
| Drain Current | 3.5 A |
| Drain to Source On Resistance | 0.085 Ohms |
| Drain to Source Voltage | -30 V |
| Fall Time | 20 ns |
| Forward Transconductance | 7.2 S |
| Forward Voltage, Diode | -1.2 V |
| Gate to Source Voltage | ±20 V |
| Height | 0.041" (1.05mm) |
| Junction to Ambient Thermal Resistance | 125 °C/W |
| Length | 0.177 in |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 2 |
| Number of Pins | 8 |
| Operating and Storage Temperature | -55 to +150 C |
| Package Type | TSSOP |
| Polarization | P-Channel |
| Power Dissipation | 1 W |
| Series | SI69 Series |
| Temperature Operating Range | -55 to +150 °C |
| Total Gate Charge | 30 nC |
| Turn Off Delay Time | 60 ns |
| Turn On Delay Time | 20 ns |
| Typical Gate Charge @ Vgs | 17 nC @ -15 V |
| Voltage, Breakdown, Drain to Source | -30 V |
| Width | 0 in |