Siliconix / Vishay SI9945AEY-T1-E3

MOSFET, Power; Dual N; 60 V; + 20 V; 2.4 W; SO-8; 75 A (Continuous); -55 degC

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Siliconix / Vishay SI9945AEY-T1-E3 Specifications

Property	Value
Drain Current	+/-3.7 A
Drain to Source On Resistance	0.08 Ohms
Forward Transconductance	11 S
Forward Voltage, Diode	1.2 V
Gate to Source Voltage	±20 V
Junction to Ambient Thermal Resistance	93 °C/W
Operating Temperature	-55 to 175 °C
Package Type	SO-8
Polarization	N-Channel
Power Dissipation	2.4 W
Series	SI99 Series
Total Gate Charge	11 nC
Turn Off Delay Time	21 ns
Turn On Delay Time	9 ns
Type	Dual Power
Voltage, Breakdown, Drain to Source	60 V