Siliconix / Vishay SUP75N03-04-E3
MOSFET; TO-220 30V 75A 4MOHMWe are pleased to offer our customers Siliconix / Vishay products with delivery to their respective countries. Please contact us for detailed information about pricing and delivery times. In your request, kindly send information containing product codes and specific details to our [email protected] address.
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Siliconix / Vishay SUP75N03-04-E3 Specifications
| Property | Value |
|---|---|
| Channel Type | N |
| Configuration | Single |
| Dimensions | 10.51 x 4.65 x 15.49 mm |
| Drain Current | 75 A |
| Drain to Source On Resistance | 0.008 Ohms |
| Drain to Source Voltage | 30 V |
| Fall Time | 95 ns |
| Forward Transconductance | 30 S |
| Forward Voltage, Diode | 1.3 V |
| Gate to Source Voltage | ±20 V |
| Height | 0.61" (15.49mm) |
| Input Capacitance | 10742 pF @ 25 V |
| Junction to Ambient Thermal Resistance | 40 °C/W |
| Length | 0.413 in |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Number of Pins | 3 |
| Operating and Storage Temperature | -55 to +175 C |
| Package Type | TO-220AB |
| Polarization | N-Channel |
| Power Dissipation | 187 W |
| Resistance, Thermal, Junction to Case | 0.6 °C/W |
| Series | SUP Series |
| Temperature Operating Range | -55 to +175 °C |
| Total Gate Charge | 250 nC |
| Turn Off Delay Time | 190 ns |
| Turn On Delay Time | 20 ns |
| Typical Gate Charge @ Vgs | 200 nC @ 10 V |
| Voltage, Breakdown, Drain to Source | 30 V |
| Width | 0 in |