Infineon IRF540ZPBF
MOSFET, Power,N-Ch,VDSS 100V,RDS(ON) 21 Milliohms,ID 36A,TO-220AB,PD 92W,gFS 36VWe are pleased to offer our customers Infineon products with delivery to their respective countries. Please contact us for detailed information about pricing and delivery times. In your request, kindly send information containing product codes and specific details to our [email protected] address.
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Infineon IRF540ZPBF Specifications
| Property | Value |
|---|---|
| Application | For automotive applications |
| Channel Type | N |
| Configuration | Single |
| Dimensions | 10.67 x 4.83 x 9.02 mm |
| Drain Current | 36 A |
| Drain to Source On Resistance | 26.5 mOhms |
| Drain to Source Voltage | 100 V |
| Fall Time | 39 ns |
| Forward Transconductance | 36 V |
| Forward Voltage, Diode | 1.3 V |
| Gate to Source Voltage | ±20 V |
| Height | 0.355" (9.02mm) |
| Input Capacitance | 1770 pF @ 25 V |
| Junction to Ambient Thermal Resistance | 62 °C⁄W |
| Length | 0.42 in |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Number of Pins | 3 |
| Operating and Storage Temperature | -55 to +175 C |
| Package Type | TO-220AB |
| Polarization | N-Channel |
| Power Dissipation | 92 W |
| Product Header | Hexfet® Power MOSFET |
| Resistance, Thermal, Junction to Case | 1.64 °C/W |
| Series | HEXFET Series |
| Temperature Operating Range | -55 to +175 °C |
| Total Gate Charge | 42 nC |
| Turn Off Delay Time | 43 ns |
| Turn On Delay Time | 15 ns |
| Typical Gate Charge @ Vgs | 42 nC @ 10 V |
| Voltage, Breakdown, Drain to Source | 100 V |
| Width | 0 in |