Infineon IRFS3107PBF
IRFS3107PBF N-channel MOSFET Transistor, 230 A, 75 V, 3-Pin D2PAKWe are pleased to offer our customers Infineon products with delivery to their respective countries. Please contact us for detailed information about pricing and delivery times. In your request, kindly send information containing product codes and specific details to our [email protected] address.
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Infineon IRFS3107PBF Specifications
| Property | Value |
|---|---|
| Application | High Efficiency Synchronous Rectification in SMPS; Uninterru |
| Channel Type | N |
| Configuration | Dual Drain |
| Dimensions | 10.67 x 9.65 x 4.83 mm |
| Drain Current | 230 A |
| Drain to Source On Resistance | 2.5 mOhms |
| Drain to Source Voltage | 75 V |
| Fall Time | 100 ns |
| Forward Transconductance | 230 S |
| Forward Voltage, Diode | 1.3 V |
| Gate to Source Voltage | ±20 V |
| Height | 0.19" (4.83mm) |
| Input Capacitance | 9370 pF @ 50 V |
| Junction to Ambient Thermal Resistance | 40 °C/W |
| Length | 0.42 in |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | –55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Number of Pins | 3 |
| Package Type | D2PAK |
| Power Dissipation | 370 W |
| Resistance, Thermal, Junction to Case | 0.4 °C/W |
| Rise Time | 110 |
| Series | HEXFET Series |
| Temperature Operating Range | -55 to +175 °C |
| Turn Off Delay Time | 99 ns |
| Turn On Delay Time | 19 ns |
| Typical Gate Charge @ Vgs | 160 nC @ 10 V |
| Width | 0 in |