NTE Electronics, Inc. NTE102A
Transistor, Bipolar,Ge,PNP,Amplifier, Power,IC 1A,PD 650mW,TO-1,VCBO 32V,hFE 295We are pleased to offer our customers NTE Electronics, Inc. products with delivery to their respective countries. Please contact us for detailed information about pricing and delivery times. In your request, kindly send information containing product codes and specific details to our [email protected] address.
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NTE Electronics, Inc. NTE102A Specifications
| Property | Value |
|---|---|
| Amplifier Type | Medium Power |
| Collector Current | 1 A |
| Collector to Base Voltage | 32 V |
| Collector to Emitter Voltage | 10 V |
| Configuration | Common Base |
| Diameter | 6.09 mm |
| Dimensions | 6.09 Dia. x 10.4 H mm |
| Emitter to Base Voltage | 10 V |
| Height | 0.409" (10.4mm) |
| Material | Si |
| Maximum Operating Temperature | +90 °C |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Number of Pins | 3 |
| Operating Frequency | 2.3 MHz |
| Package Type | TO-1 |
| Polarity | PNP |
| Power Dissipation | 650 mW |
| Primary Type | Ge |
| Product Header | Germanium Complementary Transistor |
| Series | Transistor Series |
| Temperature Operating Range | -55 to +90 °C |
| Transistor Polarity | PNP |
| Transistor Type | PNP |
| Type | Amplifier, Power |
| UPC Code | 768249005414 |
| Voltage, Collector to Emitter, Saturation | 0.17 V |
| Voltage, Saturation, Collector to Emitter | 0.17 V |