NTE Electronics, Inc. NTE2387
Power MOSFET,N-Ch,VDSS 800V,RDS(ON) 2.7Ohms,ID 4A,PD 125W,VGS+/-30V,gFS 4.3MhosWe are pleased to offer our customers NTE Electronics, Inc. products with delivery to their respective countries. Please contact us for detailed information about pricing and delivery times. In your request, kindly send information containing product codes and specific details to our [email protected] address.
Our product range includes a wide variety of NTE Electronics, Inc. options and other models. If you cannot find the model you are looking for, you can email us or fill out the Request a Quote form. Our company only offers original or new products. If you have any specific requests in this regard, please do not hesitate to contact us.
On this page, you can find detailed information about the NTE Electronics, Inc. NTE2387 product. The NTE Electronics, Inc. brand is known for its high-quality parts used in various industries. The site features different NTE Electronics, Inc. product models, providing options tailored to your needs.
Please contact us to place an order for the NTE Electronics, Inc. NTE2387 product or to learn more details. We are happy to assist in verifying the product or exploring other models.
Feel free to get in touch with us. We are here to deliver the right part in the most reliable manner. Customer satisfaction and product quality are our priorities. We are here to provide you with the best service.
NTE Electronics, Inc. NTE2387 Specifications
| Property | Value |
|---|---|
| Application | For high speed switch |
| Channel Type | N |
| Configuration | Single |
| Drain Current | 4 A |
| Drain to Source On Resistance | 3 Ohms |
| Drain to Source Voltage | 800 V |
| Fall Time | 40 ns (Typ.) |
| Forward Transconductance | 4.3 S |
| Forward Voltage, Diode | 1 V |
| Gate to Source Voltage | ±30 V |
| Height | 0.61" (15.49mm) |
| Input Capacitance | 1000 pF @ 25 V |
| Junction to Ambient Thermal Resistance | 60 °C⁄W |
| Length | 0.42 in |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Number of Pins | 3 |
| Operating and Storage Temperature | -55 to +150 C |
| Package Type | TO-220 |
| Polarization | N-Channel |
| Power Dissipation | 125 W |
| Product Header | N-Channel Enhancement Mode High Speed Switch MOSFET |
| Resistance, Thermal, Junction to Case | 1 °C⁄W (Max.) |
| Series | MOSFET Series |
| Temperature Operating Range | -55 to +150 °C |
| Turn Off Delay Time | 130 ns |
| Turn On Delay Time | 10 ns |
| UPC Code | 768249114017 |
| Voltage, Breakdown, Drain to Source | 800 V |