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NTE Electronics, Inc. NTE2389
NTE Electronics, Inc. NTE2389
POWER MOSFET N-CHANNEL 60V ID=38A TO-220 CASE HIGH SPEED SWITCH ENHANCEMENT MODEWe are pleased to offer our customers NTE Electronics, Inc. products with delivery to their respective countries. Please contact us for detailed information about pricing and delivery times. In your request, kindly send information containing product codes and specific details to our [email protected] address.
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NTE Electronics, Inc. NTE2389 Specifications
Property | Value |
---|---|
Channel Type | N |
Configuration | Single |
Drain Current | 35 A |
Drain to Source On Resistance | 45 Ohms |
Drain to Source Voltage | 60 V |
Forward Transconductance | 13.5 S |
Forward Voltage, Diode | 1.4 V |
Gate to Source Voltage | ±30 V |
Height | 0.61" (15.49mm) |
Input Capacitance | 1650 pF @ 25 V |
Junction to Ambient Thermal Resistance | 60 °C⁄W |
Length | 0.42 in |
Maximum Operating Temperature | +175 °C |
Minimum Operating Temperature | -55 °C |
Mounting Type | Through Hole |
Number of Elements per Chip | 1 |
Number of Pins | 3 |
Operating and Storage Temperature | -55 to +175 C |
Package Type | TO-220 |
Polarization | N-Channel |
Power Dissipation | 125 W |
Product Header | N-Channel Enhancement Mode High Speed Switch MOSFET |
Resistance, Thermal, Junction to Case | 1.2 °C⁄W (Max.) |
Series | MOSFET Series |
Temperature Operating Range | -55 to +175 °C |
Turn Off Delay Time | 125 ns |
Turn On Delay Time | 25 ns |
UPC Code | 768249389514 |
Voltage, Breakdown, Drain to Source | 60 V |