NTE Electronics, Inc. NTE2399
MOSFET,N-Ch,VDSS 1000V,RDS(ON) 0.5Ohm,ID 3.1A,TO-220,PD 125W,VGS +/-20V,Qg 80nCWe are pleased to offer our customers NTE Electronics, Inc. products with delivery to their respective countries. Please contact us for detailed information about pricing and delivery times. In your request, kindly send information containing product codes and specific details to our [email protected] address.
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NTE Electronics, Inc. NTE2399 Specifications
| Property | Value |
|---|---|
| Channel Type | N |
| Configuration | Single |
| Drain Current | 3.1 A |
| Drain to Source On Resistance | 0.5 Ohms |
| Drain to Source Voltage | 1000 V |
| Fall Time | 29 ns (Typ.) |
| Forward Transconductance | 2.1 S |
| Forward Voltage, Diode | 1.8 V |
| Gate to Source Voltage | ±20 V |
| Height | 0.61" (15.49mm) |
| Input Capacitance | 980 pF @ 25 V |
| Junction to Ambient Thermal Resistance | 62 °C⁄W |
| Length | 0.42 in |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Number of Pins | 3 |
| Operating and Storage Temperature | -55 to +150 C |
| Package Type | TO-220 |
| Polarization | N-Channel |
| Power Dissipation | 125 W |
| Product Header | N-Channel Enhancement Mode High Speed Switch MOSFET |
| Resistance, Thermal, Junction to Case | 1 °C⁄W |
| Series | MOSFET Series |
| Temperature Operating Range | -55 to +150 °C |
| Total Gate Charge | 80 nC |
| Turn Off Delay Time | 89 ns |
| Turn On Delay Time | 12 ns |
| Typical Gate Charge @ Vgs | Maximum of 80 nC @ 10 V |
| UPC Code | 768249411215 |
| Voltage, Breakdown, Drain to Source | 1000 V |