ON Semiconductor 2N5886G
Transistor, Bipolar,Si,NPN,High Power,VCEO 80VDC,IC 25A,PD 200W,TO-204AA (TO-3)We are pleased to offer our customers ON Semiconductor products with delivery to their respective countries. Please contact us for detailed information about pricing and delivery times. In your request, kindly send information containing product codes and specific details to our [email protected] address.
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ON Semiconductor 2N5886G Specifications
| Property | Value |
|---|---|
| Collector Current | 25 A |
| Collector to Base Voltage | 80 V |
| Collector to Emitter Voltage | 80 V |
| Configuration | Common Base |
| Dimensions | 39.37 x 8.51 x 26.67 mm |
| Emitter to Base Voltage | 5 V |
| Height | 1.05" (26.67mm) |
| Length | 1.55 in |
| Material | Si |
| Maximum Operating Temperature | +200 °C |
| Minimum Operating Temperature | -65 °C |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Number of Pins | 2 |
| Operating Frequency | 4 MHz |
| Package Type | TO-204 |
| Polarity | NPN |
| Power Dissipation | 200 W |
| Primary Type | Si |
| Product Header | Complementary Silicon High Power Transistor |
| Resistance, Thermal, Junction to Case | 0.875 °C/W |
| Series | 2N Bipolar Series |
| Temperature Operating Range | -65 to +200 °C |
| Transistor Type | NPN |
| Type | High Power |
| Voltage, Breakdown, Collector to Emitter | 80 V |
| Voltage, Collector to Emitter, Saturation | 4 V |
| Voltage, Saturation, Base to Emitter | 2.5 V |
| Width | 0 in |