ON Semiconductor MJD45H11G
ON Semi MJD45H11G PNP Bipolar Transistor, 8 A, 80 V, 3-Pin DPAKWe are pleased to offer our customers ON Semiconductor products with delivery to their respective countries. Please contact us for detailed information about pricing and delivery times. In your request, kindly send information containing product codes and specific details to our [email protected] address.
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ON Semiconductor MJD45H11G Specifications
| Property | Value |
|---|---|
| Collector Current | 16 A |
| Collector to Emitter Voltage | 80 V |
| Configuration | Common Base |
| Dimensions | 6.73 x 6.22 x 2.38 mm |
| Emitter to Base Voltage | 5 V |
| Height | 0.094" (2.38mm) |
| Length | 0.264 in |
| Material | Si |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Number of Pins | 3 |
| Operating Frequency | 90 MHz |
| Package Type | DPAK |
| Polarity | PNP |
| Power Dissipation | 20 W |
| Primary Type | Si |
| Product Header | PNP Silicon Complementary Power Transistor |
| Resistance, Thermal, Junction to Case | 6.25 °C/W |
| Series | Transistor Series |
| Temperature Operating Range | -55 to +150 °C |
| Transistor Type | PNP |
| Type | Power |
| Voltage, Breakdown, Collector to Emitter | 80 V |
| Voltage, Collector to Emitter, Saturation | 1 V |
| Voltage, Saturation, Base to Emitter | 1.5 V |
| Width | 0 in |